|
Properties of Dielectric Material at 300K |
|
Properties |
SiO2 |
Si3N4 |
|
Structure |
Amorphouse |
Amorphouse |
|
Melting point (C) |
~1600 |
|
|
Density (g/cm^3) |
2.2 |
3.1 |
|
Refractive index |
1.46 |
2.05 |
|
Dielectric constant |
3.9 |
7.5 |
|
Dielectric strength (V/cm) |
1E7 |
1E7 |
|
Energy gap (eV) |
9 |
~5 |
|
Infrared absotption band (um) |
9.3 |
|
|
Thermal expansion coefficient (/C) |
5E-7 |
|
|
Thermal conductivity (W/cm-K) |
0.014 |
|
|
dc resistivity (ohm-cm) at 25C |
1E14 to 1E16 |
1E14 |
|
Etch rate in buffered HF (A/min) |
1000 |
5 to 10 |
|
|
|
|
References: Physics of semicondcutor Devices, S.M. Sze, 2nd Edition;
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