|
|
Properties of Semiconductors at 300K |
|
|
|
|
Bandgap (eV) |
Mobility (cm^2/V-s) |
Effective mass m*/m0 |
Band |
Lattice constant (A) |
|
|
|
|
electron |
hole |
electron |
hole |
|
|
|
Element |
C |
5.47 |
1800 |
1200 |
0.2 |
0.25 |
Indirect |
3.56683 |
|
|
Ge |
0.66 |
3900 |
1900 |
1.64 |
0.04 |
Indirect |
5.64613 |
|
|
Si |
1.12 |
1500 |
450 |
0.98 |
0.16 |
Indirect |
5.43095 |
|
|
Sn |
|
1400 |
1200 |
|
|
Direct |
6.48920 |
|
|
|
|
|
|
|
|
|
|
|
IV-IV |
SiC |
2.966 |
400 |
50 |
0.6 |
1 |
Indirect |
a=3.086,c=15.117 |
|
|
|
|
|
|
|
|
|
|
|
III-V |
AlSb |
1.58 |
200 |
420 |
0.12 |
0.98 |
Indirect |
6.1355 |
|
|
BN |
7.5 |
|
|
|
|
Indirect |
3.615 |
|
|
BP |
2 |
|
|
|
|
|
4.538 |
|
|
GaN |
3.36 |
380 |
|
0.19 |
0.6 |
|
a=3.189,c=5.185 |
|
|
GaSb |
0.72 |
5000 |
850 |
0.042 |
0.4 |
Direct |
6.0959 |
|
|
GaAs |
1.42 |
8500 |
400 |
0.067 |
0.082 |
Direct |
5.6533 |
|
|
GaP |
2.26 |
110 |
75 |
0.82 |
0.60 |
Indirect |
5.4512 |
|
|
InSb |
0.17 |
80000 |
1250 |
0.0145 |
0.40 |
Direct |
6.4794 |
|
|
InAs |
0.36 |
33000 |
460 |
0.023 |
0.4 |
Direct |
6.0584 |
|
|
InP |
1.35 |
4600 |
150 |
0.077 |
0.64 |
Direct |
5.8686 |
|
|
|
|
|
|
|
|
|
|
|
II-VI |
CdS |
2.42 |
340 |
50 |
0.21 |
0.80 |
Direct |
5.832 |
|
|
CdSe |
1.70 |
800 |
|
0.13 |
0.45 |
Direct |
6.050 |
|
|
CdTe |
1.56 |
1050 |
100 |
|
|
Direct |
6.482 |
|
|
ZnO |
3.35 |
200 |
180 |
0.27 |
|
Direct |
4.580 |
|
|
ZnS |
3.68 |
165 |
5 |
0.4 |
|
Direct |
5.420 |
|
|
|
|
|
|
|
|
|
|
|
IV-VI |
PbS |
0.41 |
600 |
700 |
0.25 |
0.25 |
Indirect |
5.9362 |
|
|
PbTe |
0.31 |
6000 |
4000 |
0.17 |
0.20 |
Indirect |
6.4620 |
References: Physics of semicondcutor Devices, S.M. Sze, 2nd Edition;
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